Abstract Proceedings of ICIRESM – 2019
Full conference PDF is available to the subscribed user. Use your subscription login to access,
CHARACTERISATION OF GALLIUM DOPED TIN OXIDE THIN FILMS PREPARED BY DIP COATING METHOD
The Titanium oxide and Ga-doped Titanium oxide thin films were are deposited by Dip Coating Method technique. The prepared samples were Characterized using X-ray diffraction, Ultraviolet-visible spectroscopy, photoluminescence and Fourier transform infrared spectroscopy. The XRD pattern of the films confirmed tetragonal structure with the polycrystalline nature. The optical transmittance was increased with the decrease in the optical energy band gap. The optical constants such as extinction coefficient and refractive index were determined. The intensity of the photoluminescence emission was observed at 700 nm for doped films. The Fourier Transform Infrared Spectroscopy confirms that a (SnO2) phase has been formed. The field dependent conductivity showed an insignificant rise in photocurrent for (SnO2) which was in conformity with its wide band gap nature.
Thin films, Dip coating method, XRD, UV PL A statistical control chart for monitoring customer Waiting time
30/08/2019
126
19124
IMPORTANT DAYS
Paper Submission Last Date
September 27th, 2025
Notification of Acceptance
October 25th, 2025
Camera Ready Paper Submission & Author's Registration
November 11th, 2025
Date of Conference
November 28th, 2025